Key Responsibilities: .Responsible for the design and optimization of Silicon and/or Silicon Carbide (SiC) Power MOSFET devices for applications across a wide voltage range. .Utilize TCAD, SPICE, finite element analysis (FEA) software, and layout design tools for device simulation, performance evaluation, and layout verification. .Collaborate closely with process integration, layout, product, and QRA teams to drive new product development and mass production. .Prepare technical documentation and deliver design presentations in project meetings. .Support customer inquiries. Qualifications: .Master's degree or above in Electrical Engineering, Electronics, Materials Science, Physics, or related fields. .Over 5 years of experience in Power MOSFET or discrete device design. .Proficient in TCAD simulation tools such as Synopsys Sentaurus, and Silvaco. Preferred Qualifications: .Experience in designing Trench, Planar, or Shielded Gate Trench (SGT) structures, and ESD protection devices. .Experience in mass production ramp-up or supporting wafer foundry projects. .Prior involvement in automotive or industrial applications is a plus. .Familiar with SPICE modeling and finite element analysis tools (e.g., COMSOL, Ansys).
待遇面議
(經常性薪資達 4 萬元或以上)
未填寫
1. 每年調薪制度 2. 績效獎金 3. 中秋 / 端午 / 年終獎金 ( 2個月須為在職之正職員工 ) 4. 提供全額補助之團體保險 ( 含員工本人、配偶、子女 ) 5. 每年定期舉辦優於法令免費健康檢查(提供眷屬、親友優惠) 6. 本公司為美國那斯達克上市之公司,提供績優員工限制型股票 7. 發明暨專利申請獎金 8. 勞動節、三節及生日禮券 ( 福委會提供 ) 9. 婚喪喜慶及生育補助 10. 優於勞基法的勞工福利及休假制度 11. 內、外部教育訓練